Common the preparation of graphene methods include Mechanical peeling method, Redox method, SiC Epitaxial Growth method and Chemical Vapor Deposition (CVD).
Table 1 Comparison of four kinds of preparation methods
|
Methods |
Overview |
Advantage |
Disadvantage |
|
Mechanical Peeling |
A method that use friction between the object and the graphene to obtain graphene sheet material |
Simple operat, graphene obtained usually kept intact crystal structure |
Sheet obtained is small and production efficiency is low |
|
Redox |
A method that put graphite to oxide and then be separated by physical methods, finally revert by the chemical method and obtain graphene |
Simple operat, high yield |
Product quality is lower |
|
SiC Epitaxial Growth |
In high temperature environment of the ultra-high vacuum, put Carbon atom recombination to obtain graphene based on the SiC substrate |
Can obtain high-quality graphene |
This method requires higher of device |
|
CVD |
CVD is the most likely to achieve industrialization and prepare high quality, large-area graphene method |
Graphene prepared by this method has a large area and high quality features |
Higher costs at this stage, the process conditions should be also further improved |
Source: Internet, Gos Research Center, Jan. 2016
Figure 7 2014 market share for various preparation methods of Graphene
Source: Gos Research Center, Jan. 2016
